EM636165TS-6G是几M 的，恩山老大帮忙

qq3106911

EM636165TS-6G是几M 的，是华为猫上的

恩山无线

8M

yikai1982

好象是16m的

yy5409

The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K x 16 bit DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit bank is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. The EM636165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications.

Etrontech EM636165TS 2MB chips

[ 本帖最后由 yy5409 于 2008-4-25 08:01 编辑 ]

恩山无线

对，我搞错了，em638165ts 才是8M的，EM636是2M的没错。

WSK

好像是8M的   64Mbit